Toshiba MOSFETs Silicon P-Channel MOS (U-MOSⅦ-H) High-Speed Switching - SSM3K76MFV
Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
| Application Scope | High-Speed Switching |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅦ-H |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V |
| Gate-Source voltage | VGSS | +/-8 | V |
| Drain current | ID | 800 | mA |
| Power Dissipation | PD | 0.15 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 1.0 | V |
| Gate threshold voltage (Min) | Vth | - | 0.4 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 840 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 480 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 300 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 235 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 55 | pF |
| Total gate charge (Typ.) | Qg | VGS=4.5V | 1.0 | nC |
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